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Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered memory films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Statistic plots of the positive/negative forming voltages of the devices with various Ti-top-electrode thicknesses. The inset shows the band diagram with metal work function difference across at thermal equilibrium. (b) RS behaviors of the 5T devices operated by applying positive or negative bias, showing the nonpolar RS. The inset shows the endurance tests of four kinds of RS modes in the 5T devices.

Image of FIG. 2.
FIG. 2.

(a) Bipolar RS behaviors of the 40T devices, switched on by positive bias and then switched off by negative bias. (b) A fluctuant ON process observed in the 40T devices when performing the unipolar RS by applying negative bias.

Image of FIG. 3.
FIG. 3.

Schematic description of the conducting filaments formation by applying negative bias to switch the 40T devices on. (a) OFF-state where the filaments are ruptured near the Ti top electrode. (b) The competition between filament formation and rupture causing the fluctuant ON process. (c) ON-state where the conducting filaments are formed in series with the conductive layer.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films