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(a) Schematic device structure and (b) photograph of the -FET. Ti films (20 nm thick) are used as the source, drain, and gate electrodes. A 150-nm-thick -C12A7 film is used as the gate insulator. Channel length and channel width are 200 and , respectively.
(a) Glancing angle XRD pattern of a 150-nm-thick -C12A7 layer. Broad halo of -C12A7 is seen around . Topographic AFM image of the C12A7 film on the surface is also shown in the inset. (b) Cross-sectional HRTEM image of the 150-nm-thick heterointerface, showing an abrupt interface of . Featureless image of -C12A7 clearly indicates that the -C12A7 layer is glass. A broad halo pattern is seen in the selected area electron diffraction patterns of -C12A7 (right).
(a) Typical transfer and (b) output characteristics of the -FET with 150-nm thick -C12A7 gate insulator at room temperature. Channel length and channel width are 200 and , respectively. Effective mobility , field-effect mobility and sheet charge density vs plots for the -FET are also shown in the inset of (a). The dotted line in (b) indicates value.
Field-modulated thermopower for the -FET channel. (log scaled) plots (Ref. 14) for electron doped are also shown in the inset as a reference.
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