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Improvement of interface properties by oxidation using hydrogen peroxide
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10.1063/1.3231923
/content/aip/journal/apl/95/11/10.1063/1.3231923
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3231923

Figures

Image of FIG. 1.
FIG. 1.

Interface state density as a function of energy for MOS structures. Energy scale corresponds to the region of bandgap near the bottom of the conduction band. Measurements were carried out between 30 and .

Image of FIG. 2.
FIG. 2.

Sketch of the sample processing route evidencing the annealing and etching conditions used in the experiment. A specific name is assigned to each sample corresponding to its processing history.

Image of FIG. 3.
FIG. 3.

Si regions of XPS spectra corresponding to samples B (upper part) and sample C (bottom part). Points represent experimental data. Solid curves correspond to fitting components, background, and their sum. The energy position of components assigned to silicon oxycarbide and silicon carbide are indicated. a.u. stands for arbitrary units.

Tables

Generic image for table
Table I.

areal densities of samples A, B, and C determined by nuclear reaction analysis. In each case, it is marked the existence of a component related to the SiC substrate in XPS analysis.

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/content/aip/journal/apl/95/11/10.1063/1.3231923
2009-09-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3231923
10.1063/1.3231923
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