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High performance, high temperature InGaAs/AlAs(Sb) quantum cascade lasers
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10.1063/1.3232219
/content/aip/journal/apl/95/11/10.1063/1.3232219
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3232219
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated conduction band profile under applied bias for two active regions and one injector of QCL structure (sample B). The calculated low temperature emission wavelength is . The moduli squared of the relevant wave functions are shown. The layer sequence of one period in nanometers, starting from the injector barrier, is , where AlAsSb barriers are in bold font, InGaAs quantum wells are in normal font and underlined layers are Si-doped to . For sample A the barriers in the brackets are replaced by AlAs barriers.

Image of FIG. 2.
FIG. 2.

Voltage-current (300 K) and temperature-dependent light-current (260–400 K in 20 K steps) characteristics of lasers from sample A and sample B.

Image of FIG. 3.
FIG. 3.

Wall plug efficiency, defined as twice the peak optical power measured per facet divided by the applied electrical power, as a function of current density for lasers.

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/content/aip/journal/apl/95/11/10.1063/1.3232219
2009-09-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance, high temperature λ≈3.7 μm InGaAs/AlAs(Sb) quantum cascade lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3232219
10.1063/1.3232219
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