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The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
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10.1063/1.3230069
/content/aip/journal/apl/95/12/10.1063/1.3230069
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3230069
/content/aip/journal/apl/95/12/10.1063/1.3230069
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/content/aip/journal/apl/95/12/10.1063/1.3230069
2009-09-24
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3230069
10.1063/1.3230069
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