1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
Rent:
Rent this article for
USD
10.1063/1.3230069
/content/aip/journal/apl/95/12/10.1063/1.3230069
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3230069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Responsivity of the four detectors with doping concentrations of (NID), , , and at with a bias of .

Image of FIG. 2.
FIG. 2.

Dark current density vs applied bias of the detectors with four different doping concentrations at 77 K.

Image of FIG. 3.
FIG. 3.

Specific detectivity and dark current density as a function of doping concentration in absorption region of nBn MWIR detector ( and ).

Image of FIG. 4.
FIG. 4.

Bias-dependent specific detectivity of the four detectors with doping concentrations of (NID), , , and measured at .

Loading

Article metrics loading...

/content/aip/journal/apl/95/12/10.1063/1.3230069
2009-09-24
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3230069
10.1063/1.3230069
SEARCH_EXPAND_ITEM