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Spectral dependences of and for 3 min etched (a) one-sided and (b) double-sided bSi samples. Transmission haze is also included in (a). The insets schematically show the main reflected and transmitted light paths.
and at 1200 nm wavelength on (a) one-sided and (b) double-sided bSi samples, for black-etch times from 0 (planar) to 8 min. Panels (c) and (d) present XSEM images of bSi surfaces with and 6 min, respectively. Scale bars are 500 nm.
Performance comparison between planar (0 min etch) and bSi solar cells under 1-sun illumination, for black-etch times up to 8 min.
IQE of planar and bSi solar cells. Symbols show PC1D calculations of IQE assuming highly doped surface dead layers of the indicated thicknesses.
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