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The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
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10.1063/1.3232179
/content/aip/journal/apl/95/12/10.1063/1.3232179
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3232179
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The representative transfer and output curves (inset) of -IGZO TFT on PI substrates, deposited with gate dielectrics .

Image of FIG. 2.
FIG. 2.

(a) The evolution of the transfer curves for -IGZO TFTs with gate dielectrics as a function of the applied stress time . (b) The variations in the shift for -IGZO TFTs with various gate dielectrics ( , , and ) as a function of stress time.

Image of FIG. 3.
FIG. 3.

The hysteresis curves for -IGZO TFTs depending on various gate dielectrics [(a) and (inset)]. (b) The count of hydrogen atoms in various gate dielectrics films ( , , and ), measured by ERD analysis.

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/content/aip/journal/apl/95/12/10.1063/1.3232179
2009-09-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3232179
10.1063/1.3232179
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