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Stress influence on band-edge luminescence properties of
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10.1063/1.3232218
/content/aip/journal/apl/95/12/10.1063/1.3232218
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3232218

Figures

Image of FIG. 1.
FIG. 1.

Calculated strain dependence of relative valence band ordering of (green curve) and (blue curve) versus the (flat red curve) band. The black dotted and dashed curves are the deduced crystal-splitting and spin-orbital splitting .

Image of FIG. 2.
FIG. 2.

(a) The direct bandgap shifts in and (b) direct bandgap together with indirect bandgap shifts of under strain. The full and hollow cubes denote the direct and indirect bandgap shifts under biaxial strain. The full and hollow circles denote the direct and indirect bandgap shifts under uniaxial strain and the hollow and inverse triangles denote the bandgap shifts in AlN epilayers under different substrate (Ref. 2) and different temperature (Refs. 5 and 26).

Image of FIG. 3.
FIG. 3.

The uppermost valence band and undermost conduction band under different strain from −2% to 2%. Under compression to −2%, the point is lower than the point by about 0.12 eV.

Tables

Generic image for table
Table I.

Calculated lattice constants, (Å), bandgap (eV), elastic constants (GPa), and bulk modulus (GPa) for - and . The results (denoted as present) are compared to experimental values and other calculation.

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/content/aip/journal/apl/95/12/10.1063/1.3232218
2009-09-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress influence on band-edge luminescence properties of 4H-AlN
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3232218
10.1063/1.3232218
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