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Scheme of grating consisting of supercell units. The supercell unit is composed of an -doped semiconductor film milled by two subwavelength slits under the application of an external static magnetic field.
Calculated and fitted magnetic field intensity distribution between the two slits on the transmitted surface of the grating at zero external magnetic field. The parameters are chosen as: the illuminating wave frequency , , , , , and . The inset shows the interference pattern in the central part, .
Influence of the external magnetic field on the transmitted magnetic field between the two slits. (a) Calculated magnetic field intensity distribution under different external magnetic field: , 0.6, and . (b) Variations of integrated transmitted magnetic field intensity between the two slits as a function of . The other parameters remain the same as Fig. 2.
Variations of the amplitudes of SPPs and REC with the external magnetic field. The inset shows the variation of the penetration depth of EM field into the -doped semiconductor as a function of .
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