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Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
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10.1063/1.3236533
/content/aip/journal/apl/95/12/10.1063/1.3236533
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236533

Figures

Image of FIG. 1.
FIG. 1.

(a) Calculated crystal-field splitting of wurtzite GaN under biaxial strain in the plane. (b) Calculated change in crystal-field splitting from its unstrained value for wurzite AlN, GaN, and InN under biaxial strain in the plane. The lower panels show the calculated deformation potentials (c) and (d) of GaN as a function of lattice parameter . The fitted curves are quadratic in [(a) and (b)] and linear in [(c) and (d)].

Tables

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Table I.

Equilibrium lattice parameters ( and ) and band gaps obtained with LDA, GGA, and HSE. Experimental lattice parameters at and band gap values are taken from Refs. 26 and 13 .

Generic image for table
Table II.

Deformation potentials (eV) of wurtzite AlN, GaN, and InN. For GaN the range of experimentally determined deformation potentials and the recommended values by Vurgaftman and Meyer (VM) (Ref. 13 ) are also shown.

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/content/aip/journal/apl/95/12/10.1063/1.3236533
2009-09-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236533
10.1063/1.3236533
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