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Efficiency retention at high current injection levels in -plane InGaN light emitting diodes
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10.1063/1.3236538
/content/aip/journal/apl/95/12/10.1063/1.3236538
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236538
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Figures

Image of FIG. 1.
FIG. 1.

IQE values determined from power-dependent PL and also temperature-dependent PL measurements for the -plane and -plane LEDs. For the calculation of carrier concentrations, the value was assumed to be .

Image of FIG. 2.
FIG. 2.

EL intensity as a function of the polarizer angle of the -plane LED sample grown bulk -plane GaN. The polarizer angles of 0° correspond to the and the polarizer angles of 90° correspond to the . The solid line is a guide to the eye.

Image of FIG. 3.
FIG. 3.

Relative external quantum efficiency and integrated EL intensity of the -plane LED on freestanding GaN and the reference LED on -plane bulk GaN as a function of pulsed injection current density (0.1% duty cycle and 1 kHz frequency). Both samples have the same device structure (MQW active region with 2 nm quantum wells, 12 nm barriers, and electron blocking layers).

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/content/aip/journal/apl/95/12/10.1063/1.3236538
2009-09-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236538
10.1063/1.3236538
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