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IQE values determined from power-dependent PL and also temperature-dependent PL measurements for the -plane and -plane LEDs. For the calculation of carrier concentrations, the value was assumed to be .
EL intensity as a function of the polarizer angle of the -plane LED sample grown bulk -plane GaN. The polarizer angles of 0° correspond to the and the polarizer angles of 90° correspond to the . The solid line is a guide to the eye.
Relative external quantum efficiency and integrated EL intensity of the -plane LED on freestanding GaN and the reference LED on -plane bulk GaN as a function of pulsed injection current density (0.1% duty cycle and 1 kHz frequency). Both samples have the same device structure (MQW active region with 2 nm quantum wells, 12 nm barriers, and electron blocking layers).
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