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The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen
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10.1063/1.3236779
/content/aip/journal/apl/95/12/10.1063/1.3236779
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236779
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Picture of the cryostat cell with the CNT-FET device enclosed. Laser incidence, electrical cable feedthrough, and the direction of liquid nitrogen flow are illustrated in the figure. The inset shows an enlarged picture of wire-bonded CNT-FET device on a chip carrier that can be directly plugged into the sample holder of the cryostat. (b) Optical image of the CNT-FET device underneath a 50× microscope objective. The top right inset shows a schematic of the device geometry and the bottom right inset shows the AFM image of the area surrounding the CNT.

Image of FIG. 2.
FIG. 2.

Gate-dependent Raman spectra for the semiconducting CNT-FET in (a) air, (b) , and (c) vacuum. Gate voltage has been marked above each Raman spectrum. Vertical red lines are used as reference marks to show the peak frequency at in order to evaluate the frequency shift in with .

Image of FIG. 3.
FIG. 3.

Fitted mode (a) frequency and (b) linewidth , (c) dependence of drain-source current on , and (d) location of the Fermi energy for the CNT-FET in air. Corresponding graphs are shown for the device in [(e)–(h)] and [(i)–(l)] vacuum. Six drain-source voltages ( , 0.2, 0.4, 0.6, 0.8, and 1.0 V) have been used to examine the dependence of on .

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/content/aip/journal/apl/95/12/10.1063/1.3236779
2009-09-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3236779
10.1063/1.3236779
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