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Nitridating -plane sapphire to improve crystal qualities and surface morphologies of -plane GaN grown by metalorganic vapor phase epitaxy
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10.1063/1.3237164
/content/aip/journal/apl/95/12/10.1063/1.3237164
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3237164
/content/aip/journal/apl/95/12/10.1063/1.3237164
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/content/aip/journal/apl/95/12/10.1063/1.3237164
2009-09-25
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/12/10.1063/1.3237164
10.1063/1.3237164
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