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(a) Square root of the optical absorption coefficient (normalized to the photon energy and refractive index ) of Si/5 nm stack as a function of photon energy. The vertical line marks the optical band gap width of ; (b) plot of the PC quantum yield for Si/2 nm capacitors as measured under positive (◻,○) and negative (◼,●) bias of indicated value applied to the Au electrode. The results are shown for as-deposited layers (squares) and after annealing at in for 1 min (circles). The vertical line marks the optical bandgap width of . The inset illustrates determination of the electron IPE threshold from Si into using the plot. The vertical line indicates the inferred threshold. Arrows and mark the onset of direct optical transitions within the Si crystal.
(a) Variation of the oxide charge as a function of photon energy in as-grown Si/5 nm capacitors. The results are shown for as-deposited (◼) and electron-injected (◻) samples. (b) The inferred energy distribution of trapped electrons in , as measured in the energy range 1.3–4.0 eV below the CB bottom. Filled and open bars correspond to the as-deposited and electron injected capacitors, respectively.
The charge loss percentage as a function of time in electron-injected (100)Si/2 nm capacitor as measured at room temperature under zero bias. Dashed lines illustrate the determination of charge retention time using the 50% loss criterion (Ref. 18).
Inferred interface band diagram for the stack and energy distribution of traps in films measured in the energy range 1.3–4.0 eV relative to the CB bottom. The measured values of and are indicated by vertical arrows.
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