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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
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10.1063/1.3237169
/content/aip/journal/apl/95/13/10.1063/1.3237169
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3237169
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The electrical stress time-evolution of the drain current-gate-source voltage characteristics under (a) ac stress and (b) dc gate bias stress. Insets illustrate the conditions of the employed electrical stress.

Image of FIG. 2.
FIG. 2.

The electrical stress time-evolution of the gate capacitance-gate voltage characteristics under (a) ac stress and (b) dc gate bias stress. The inset shows the electrical stress time-evolution of hysteresis characteristic in the curve. The FWD/REV stands for the forward/reverse sweep, respectively.

Image of FIG. 3.
FIG. 3.

The electrical stress time dependence of the -IGZO DOS extracted by the optical charge pumping method as proposed in our previous work (Ref. 6 ).

Image of FIG. 4.
FIG. 4.

The electrical stress time dependence of fitted with stretched exponential time dependence. While the stress time-dependent under a positive dc gate bias is well fitted with a stretched exponential function, that under the ac stress does not follow the stretched exponential time dependence. The inset shows the schematic energy band diagram illustrating the nonuniformity of energy range along the vertical direction of -IGZO active layer in extracting DOS by the optical charge pumping method (Ref. 6 ).

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/content/aip/journal/apl/95/13/10.1063/1.3237169
2009-09-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3237169
10.1063/1.3237169
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