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Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett.95, 082110 (2009)]
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2009-09-28
2014-08-01

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett.95, 082110 (2009)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238266
10.1063/1.3238266
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