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SIMS profile of a heterostructure comprised of an -type top layer doped with P at , an intrinsic middle layer devoid of B and P impurities, and an underlying Si(100) doped with B at .
(a) Cross sectional schematic of the photodiode stack including the top window, sidewalls and metallic contacts. (b) Plan-view optical image showing the various mesas ( in diameter) and associated metallic structures.
Current-voltage graphs obtained from six device mesas with diameters ranging from 60 to indicating that the dark current increases monotonically with the device size.
EQEs vs wavelength of the photodiode biased at 0.16 V indicating that the IR detection response spans all telecommunication bands up to 1750 nm. The mesas are vertically illuminated using a continuous halogen source (solid line) and several laser diodes at 1270, 1300, 1550, and 1620 nm (squares). Note the perfect correspondence between the two independent measurements.
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