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(a) SEM image of a monolayer of PS microspheres with diameter of . (b) A full 2 in. LED wafer coated with diameter PS microspheres.
(a) 2D FDTD simulation for the optical behavior of PS microspheres. (b) SEM image (tilted view) of the PR-developed surface presenting some remaining microspheres. (c) SEM image (cross-sectional view) of the developed PR. The aspect ratio of the air holes arrays was 1.6.
(a) SEM image of the etched surface, displaying the hexagonal arrangement of air holes. (b) SEM image of the GaN surface at an etching depth of 150 nm. (c) Full-view SEM image of a textured GaN LED; device size: .
A plot of voltage-current-luminance characteristics of fabricated LEDs. The forward voltages for textured LEDs (3.24 V) were nearly identical to that of the LED without texturing (3.22 V) at an injection current of 20 mA. The output power of the LED without texturing was 2.1 mW. The output powers of the textured LEDs were 2.3/2.64/3.06 mW for etching depths of 50/100/150 nm, respectively.
(a) The schematic representation of the 2D FDTD simulation. The source was located at 300 nm below the air-GaN interface. The etching depth was varied to calculate the LEE enhancement. (b) Simulated (black line) and experimental (red line) power enhancements for different etching depths.
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