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Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes
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10.1063/1.3238361
/content/aip/journal/apl/95/13/10.1063/1.3238361
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238361
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Carrier density (red curve, left-hand scale) and resistivity (blue curve, right-hand scale) as a function of the temperature for the substrate. (Inset) Schematic illustration of the device structure and measurement setup. The magnetic field is applied perpendicular to the substrate plane.

Image of FIG. 2.
FIG. 2.

(a) characteristic of the device (sample no. 33) at 25 K for several applied magnetic fields. The dashed line is the at and . (b) characteristic of the device at 50 K for various applied magnetic fields. (c) Voltage of the device as a function of magnetic field between for at . (d) Voltage as a function of magnetic field for the same device between for at .

Image of FIG. 3.
FIG. 3.

(a) characteristic of the device sample no. 27 at 350 K for various applied magnetic fields. Solid and dashed lines show the directions of the forward and reverse biases, respectively. (b) Voltage of the device as a function of magnetic field measured at three different applied currents and . Solid and dashed lines indicates the different directions in the magnetic field sweep.

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/content/aip/journal/apl/95/13/10.1063/1.3238361
2009-09-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238361
10.1063/1.3238361
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