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Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
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10.1063/1.3238362
/content/aip/journal/apl/95/13/10.1063/1.3238362
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238362
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic structure and (b) TEM image of a fabricated device.

Image of FIG. 2.
FIG. 2.

Transfer characteristics for fresh and programmed states (a) under SG-1 mode with varying second gate bias and (b) under SG-2 mode with varying first gate bias. (c) Extracted window as a function of CG bias for SG-1 and SG-2 modes.

Image of FIG. 3.
FIG. 3.

Programming characteristics under the condition of fixed and varying for a device with NW thickness of (a) 11 and (b) 50 nm.

Image of FIG. 4.
FIG. 4.

Erasing characteristics under the condition of fixed and varying for a device with 11 nm NW.

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/content/aip/journal/apl/95/13/10.1063/1.3238362
2009-09-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238362
10.1063/1.3238362
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