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(a) Schematic structure and (b) TEM image of a fabricated device.
Transfer characteristics for fresh and programmed states (a) under SG-1 mode with varying second gate bias and (b) under SG-2 mode with varying first gate bias. (c) Extracted window as a function of CG bias for SG-1 and SG-2 modes.
Programming characteristics under the condition of fixed and varying for a device with NW thickness of (a) 11 and (b) 50 nm.
Erasing characteristics under the condition of fixed and varying for a device with 11 nm NW.
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