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(a) Recorded FTIR spectra for films of ZnO (red line) deposited by SP at and room temperature spin coated zinc acetate dihydrate (black line) films. (b) SEM and (c) AFM images of a ZnO film deposited by SP at .
(a) Calculated dispersions of the refractive index and extinction coefficient . (b) Absorption (red line) and PL (blue line) spectra of a ZnO film deposited by SP at . PL spectra were obtained using an excitation wavelength of 200 nm. The inset shows the transmission spectrum for a 90-nm-thick ZnO film.
Transfer (a) and output (b) characteristics obtained from a BG-TC transistor (, ) based on films of ZnO deposited at employing aluminum S/D contacts. The inset shows the schematic of the BG-TC transistor architecture employed. Transistor characterization was performed in ambient air.
(a) Contact resistance as a function of gate bias for ZnO TFTs employing Ca, Al, and Au S/D electrodes. Inset: Simplified energy diagram between Au, Al, Ca, and ZnO. (b) Electron mobility (calculated in saturation) vs ZnO TFT channel length employing Ca, Al and Au S/D electrodes. All measurements were performed in nitrogen due to the sensitivity of Ca electrodes to atmospheric air.
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