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Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography
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10.1063/1.3238564
/content/aip/journal/apl/95/13/10.1063/1.3238564
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238564
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram detailing the fabrication process: (a) LED wafer, (b) the wafer coated with a monolayer of plain silica nanosphere, (c) residue of nanosphere with etched pattern beneath during etching, and (d) the PBG structure formed after removing the residue.

Image of FIG. 2.
FIG. 2.

(a) HE fabrication model. (b) shows a nanopillar array with slightly inclined sidewall, after etching for 120 s. (c) The final arrayed HE PBG structure formed when etching time increased to 290 s.

Image of FIG. 3.
FIG. 3.

Simulated (a) TE and (b) TM band structure. (c) Plot of simulated TE PBG vs etch selectivity. (d) Results of FDTD simulation showing energy flux distribution across the HE array structure.

Image of FIG. 4.
FIG. 4.

(a) Measured transmission spectrum, with reference to a GaN LED as-grown sample, measured and normalized angle-resolved PL spectrum for (b) as-grown sample and (c) PBG structure, and (d) measured PL angular emission pattern from the PBG structure.

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/content/aip/journal/apl/95/13/10.1063/1.3238564
2009-10-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3238564
10.1063/1.3238564
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