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Programming margin enlargement by material engineering for multilevel storage in phase-change memory
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10.1063/1.3240408
/content/aip/journal/apl/95/13/10.1063/1.3240408
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3240408
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Figures

Image of FIG. 1.
FIG. 1.

Concept of MLS in the double-layered cell. (a) Highest resistance level at the initial completely amorphous state. (b) Intermediate resistance level after the first crystallization via the filament formation and subsequent Joule heating. (c) Intermediate resistance level after crystallization gradually processes by Joule heating.

Image of FIG. 2.
FIG. 2.

Typical resistance change as a function of programming current of TiN/SbTeN double-layered cell, showing narrow total programming margin of around one order of magnitude.

Image of FIG. 3.
FIG. 3.

Resistance change as a function of programming current of double-layered cell, exhibiting wide total programming margin of more than two orders of magnitude.

Image of FIG. 4.
FIG. 4.

The effect of material characteristics on the programming margin.

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/content/aip/journal/apl/95/13/10.1063/1.3240408
2009-09-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Programming margin enlargement by material engineering for multilevel storage in phase-change memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3240408
10.1063/1.3240408
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