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Concept of MLS in the double-layered cell. (a) Highest resistance level at the initial completely amorphous state. (b) Intermediate resistance level after the first crystallization via the filament formation and subsequent Joule heating. (c) Intermediate resistance level after crystallization gradually processes by Joule heating.
Typical resistance change as a function of programming current of TiN/SbTeN double-layered cell, showing narrow total programming margin of around one order of magnitude.
Resistance change as a function of programming current of double-layered cell, exhibiting wide total programming margin of more than two orders of magnitude.
The effect of material characteristics on the programming margin.
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