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Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions
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View: Figures


Image of FIG. 1.
FIG. 1.

Raman spectrum of Si/Ge NW HJs collected under 458 nm excitation of an laser. The inset shows a TEM micrograph of a wire sample with a 20 nm length-scale bar.

Image of FIG. 2.
FIG. 2.

Low temperature normalized PL spectra of Si/Ge NW HJs recorded under two different excitation intensities, as indicated. The normalized PL spectrum of is shown for comparison.

Image of FIG. 3.
FIG. 3.

Normalized PL spectra of Si/Ge NW HJs measured under excitation intensity at different (indicated) temperatures with the fitted PL peaks and marked peak positions. The PL spectra are shifted vertically for clarity.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the PL peak near 1.0 eV in comparison with the temperature dependences of Si and Ge coefficients of thermal expansion. The inset shows representative EDX data along the NW axis with arrows pointing to the expected preferential compositions of and 50 at. % of Si within the SiGe NW HJs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions