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Typical SEM image of the synthesized GaN NRs. A high magnification SEM image in the inset clearly shows that the NR has a triangular cross section.
(a) EDX spectrum of an individual GaN NR. (b) SAED pattern of a single GaN NR obtained along the WZ zone axis. Inset indicates the direction of the corresponding NR. (c) TEM image of a single GaN NR. (d) and (e) are the HRTEM images of right and left regions of GaN NR in (c), respectively. Scale bars are 5 nm. (f) Schematic diagram of a -axis NR and the energy band diagram of WZ/ZB GaN heterojunction.
(a) UV PL spectra of GaN NRs at different temperatures from 10 to 290 K in 20 K increments. Its inset is a room-temperature PL spectrum in the wavelength range of 340–700 nm. (b) The temperature dependence of and peak energies; the red line is a fit to the data points (triangles) following a Bose–Einstein expression. (c) The integrated intensity ratios of to peak as a function of temperature.
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