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Structure and photoluminescence of wurtzite/zinc-blende heterostructure GaN nanorods
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View: Figures


Image of FIG. 1.
FIG. 1.

Typical SEM image of the synthesized GaN NRs. A high magnification SEM image in the inset clearly shows that the NR has a triangular cross section.

Image of FIG. 2.
FIG. 2.

(a) EDX spectrum of an individual GaN NR. (b) SAED pattern of a single GaN NR obtained along the WZ zone axis. Inset indicates the direction of the corresponding NR. (c) TEM image of a single GaN NR. (d) and (e) are the HRTEM images of right and left regions of GaN NR in (c), respectively. Scale bars are 5 nm. (f) Schematic diagram of a -axis NR and the energy band diagram of WZ/ZB GaN heterojunction.

Image of FIG. 3.
FIG. 3.

(a) UV PL spectra of GaN NRs at different temperatures from 10 to 290 K in 20 K increments. Its inset is a room-temperature PL spectrum in the wavelength range of 340–700 nm. (b) The temperature dependence of and peak energies; the red line is a fit to the data points (triangles) following a Bose–Einstein expression. (c) The integrated intensity ratios of to peak as a function of temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and photoluminescence of wurtzite/zinc-blende heterostructure GaN nanorods