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Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation
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10.1063/1.3241076
/content/aip/journal/apl/95/13/10.1063/1.3241076
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3241076
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of AIC process.

Image of FIG. 2.
FIG. 2.

Element in upper layer evaluated by EDX for the sample with before (a) and after annealing at for 10 h (b), and microscopic Raman spectra observed from the back side through the quartz substrate (c). Photographs of the sample are also shown.

Image of FIG. 3.
FIG. 3.

Nomarski optical micrographs [(a)–(d)], EBSD maps [(e)–(l)] of AIC-Si layers for the samples (, 5 min, 60 min, and 24 h). These analyses were performed along the normal [(e)–(h)] and in-plane directions [(i)–(l)] to the sample surfaces.

Image of FIG. 4.
FIG. 4.

Histograms of the orientation distributions for various [5 min (a), 60 min (b), and 24 h (c)]. Fractions of (001) and (111) orientations (d) and FWHM of peak components as a function of (e).

Image of FIG. 5.
FIG. 5.

Phase transition diagram of as function of thickness and growth time (a) model for Si(001) nucleation (b) and Si(111) nucleation (c) for thin and thick Al oxide layers, respectively.

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/content/aip/journal/apl/95/13/10.1063/1.3241076
2009-09-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3241076
10.1063/1.3241076
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