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Schematic illustration of AIC process.
Element in upper layer evaluated by EDX for the sample with before (a) and after annealing at for 10 h (b), and microscopic Raman spectra observed from the back side through the quartz substrate (c). Photographs of the sample are also shown.
Nomarski optical micrographs [(a)–(d)], EBSD maps [(e)–(l)] of AIC-Si layers for the samples (, 5 min, 60 min, and 24 h). These analyses were performed along the normal [(e)–(h)] and in-plane directions [(i)–(l)] to the sample surfaces.
Histograms of the orientation distributions for various [5 min (a), 60 min (b), and 24 h (c)]. Fractions of (001) and (111) orientations (d) and FWHM of peak components as a function of (e).
Phase transition diagram of as function of thickness and growth time (a) model for Si(001) nucleation (b) and Si(111) nucleation (c) for thin and thick Al oxide layers, respectively.
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