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Tunability of intersubband absorption from 4.5 to in a superlattices grown by metalorganic chemical vapor deposition
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10.1063/1.3242027
/content/aip/journal/apl/95/13/10.1063/1.3242027
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Omega/2theta (002) XRD of superlattices with four different well thicknesses: from top to bottom these are 1.2, 2.6, 3.7 nm and 5.1 nm GaN. Wells are Si doped to . The barriers for all samples are 2.9 nm thick . Inset: superlattice period (from XRD analysis) as a function of well growth time is used to extract the GaN growth rate and determine the well thicknesses.

Image of FIG. 2.
FIG. 2.

PL intensity as a function of energy for four different GaN well thicknesses: 1.2, 2.6, 3.7, and 5.1 nm—all with a constant 2.9 nm barrier thickness. Superlattice consists of 50 periods where each well is Si doped to . Inset: Comparison theory/experiment PL energy as a function of well width.

Image of FIG. 3.
FIG. 3.

(a) Solid line is the -polarization transmission for 2.6 nm well width and 2.9 nm barrier with, wells are Si doped to , the dashed line corresponds to -polarization transmission for the same sample. Inset: ISB absorption wavelength as a function of well width—experimental results (squares) and simulation (circles) for a fully strained structure. (b) From left to right, ISB absorbance for 1.2 nm (black), 2.6 nm (red), 3.7 nm (blue), and 5.1 nm (magenta) well widths. Lorentzian fits are shown (dashed lines) for the 3.7 and 5.1 nm well widths.

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/content/aip/journal/apl/95/13/10.1063/1.3242027
2009-09-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242027
10.1063/1.3242027
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