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Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy
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10.1063/1.3242029
/content/aip/journal/apl/95/13/10.1063/1.3242029
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242029
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Figures

Image of FIG. 1.
FIG. 1.

RHEED images acquired along the crystal direction: (a) Si(111) reconstruction of the starting surface following growth of the Si buffer layer; (b) buffer layer at ; after carbon growth at (c), (d), and (e) showing the formation of SiC; (f) broad rings indicate the polycrystalline structure of after growth at .

Image of FIG. 2.
FIG. 2.

Normalized XPS spectra of the C photoelectron region for various samples grown at the indicated temperatures. The positions of the carbon peaks from are 284.1 eV and is 285.1 eV. Carbon bound to silicon is shown at 282.6 eV. The pure nature of the sample is shown along with that of HOPG which is used as a reference.

Image of FIG. 3.
FIG. 3.

Normalized XPS spectra of the Si photoelectron region for various samples grown at the indicated temperatures. The positions of Si (99.1 eV), SiC (100.3 eV), and (103 eV) are marked with vertical lines. A plain Si(111) wafer is used as a reference.

Image of FIG. 4.
FIG. 4.

Normalized Raman scattering spectra showing the D and G characteristic vibrational modes for various samples grown at the indicated temperatures. The sample displays a strong Raman signal, while the sample presents a weak trace of a D and G signal. A plain Si(111) wafer is used as a standard for comparison.

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/content/aip/journal/apl/95/13/10.1063/1.3242029
2009-10-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242029
10.1063/1.3242029
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