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(a) XRD scans of films deposited at 0.2 mbar and at different temperatures. The peaks are indexed as: P: 0.8PFN–0.2PMW (reflection positions are marked by vertical dotted lines), S: STO, ◇: , ◻: . [(b)–(d)] give corresponding RHEED patterns for three films shown in (a) with the incident beam along the STO  azimuth. The polygons are guides to the eyes to visualize the symmetry of the diffraction pattern.
(a) Temperature dependence of the as-measured dielectric permittivity at frequencies . Inset: reconstructed . (b) at 1 kHz follows the modified Curie–Weiss law in the vicinity of . Inset: the VF behavior of the relaxation frequency.
(a) Macroscopic hysteresis loops at various temperatures for a 500 nm film. (b) Local piezoelectric hysteresis loop obtained by PFM at 300 K for a 150 nm film.
(a) Temperature dependence of the real part of the ac magnetic susceptibility at various frequencies. Inset: the effective relaxation frequency follows the VF behavior. (b) Magnetic field dependence of the magnetization at 5, 50, and 300 K. Inset: the magnified central region of the hysteresis loops.
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