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Epitaxial growth and magnetoelectric relaxor behavior in multiferroic thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) XRD scans of films deposited at 0.2 mbar and at different temperatures. The peaks are indexed as: P: 0.8PFN–0.2PMW (reflection positions are marked by vertical dotted lines), S: STO, ◇: , ◻: . [(b)–(d)] give corresponding RHEED patterns for three films shown in (a) with the incident beam along the STO [100] azimuth. The polygons are guides to the eyes to visualize the symmetry of the diffraction pattern.

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of the as-measured dielectric permittivity at frequencies . Inset: reconstructed . (b) at 1 kHz follows the modified Curie–Weiss law in the vicinity of . Inset: the VF behavior of the relaxation frequency.

Image of FIG. 3.
FIG. 3.

(a) Macroscopic hysteresis loops at various temperatures for a 500 nm film. (b) Local piezoelectric hysteresis loop obtained by PFM at 300 K for a 150 nm film.

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of the real part of the ac magnetic susceptibility at various frequencies. Inset: the effective relaxation frequency follows the VF behavior. (b) Magnetic field dependence of the magnetization at 5, 50, and 300 K. Inset: the magnified central region of the hysteresis loops.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth and magnetoelectric relaxor behavior in multiferroic 0.8Pb(Fe1/2Nb1/2)O3–0.2Pb(Mg1/2W1/2)O3 thin films