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Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”
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10.1063/1.3242415
/content/aip/journal/apl/95/13/10.1063/1.3242415
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242415
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

curves for three consecutive sweeps of memory cells with (all sweeps) and (only sweep 2). (a) preventing the switching back to the off state at sweep 2 and (b) switching off at sweep 2 despite active .

Image of FIG. 2.
FIG. 2.

Endurance of a memory cell (voltage sweep: , , reading voltage: ).

Image of FIG. 3.
FIG. 3.

(a) Experimental and curves for a memory cell displaying a decrease in resistance before switching to the off state; (b) proposed redeposition of Ag.

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/content/aip/journal/apl/95/13/10.1063/1.3242415
2009-10-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242415
10.1063/1.3242415
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