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Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”
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10.1063/1.3242415
/content/aip/journal/apl/95/13/10.1063/1.3242415
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242415
/content/aip/journal/apl/95/13/10.1063/1.3242415
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/content/aip/journal/apl/95/13/10.1063/1.3242415
2009-10-02
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/13/10.1063/1.3242415
10.1063/1.3242415
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