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Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica
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10.1063/1.3240888
/content/aip/journal/apl/95/14/10.1063/1.3240888
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3240888
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram showing the one-side bonding geometry of Si nanocrystals in porechannels (right plot). A field-effect transistor structure with an Al/ -Si-in-MS/ gate stack on an epilike Si layer was depicted in the left plot of (a) and its cross-sectional TEM image in (b). (c) The SFG signal is presented as the film temperature is increased (open squares) or decreased (filled triangles). For comparison, the temperature dependence of electric polarization is shown with filled circles.

Image of FIG. 2.
FIG. 2.

(a) The hysteresis characteristics of the 90-nm-thick Si–O polar layers sandwiched with 10-nm-thick buffer layers in a MIM structure. Schematic drawings are presented in the inset to illustrate the switching process. The centers of gravity of the positive and negative charge distributions are labeled by and , respectively. (b) hysteresis (top) and characteristic curves (bottom) of a MOS capacitor containing an oxide stack identical to that in (a). For comparison, the hysteresis of a MOS capacitor containing larger nc-Si contacting with the porechannels of MS (solid and dashed curves in blue) is also presented. Solid and dashed curves indicate the characteristics with a voltage sweep from positive to negative and from negative to positive, respectively. The top electrode pad of the device was made of aluminum film and in diameter.

Image of FIG. 3.
FIG. 3.

(a) A hysteretic switching curve for a MOSFET device with a gate structure of Al/ -Si-in-MS/ with a fairly low gate current was shown. (b) Data retention of the MOSFET is shown as the decaying behavior of threshold voltages (open squares) and (filled squares) with time in the on state and off state. The inset shows that the transfer characteristics of the MOSFET at after the MOSFET was programmed to the on and off state with 20 ms duration pulse of 15 and −15 V, respectively.

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/content/aip/journal/apl/95/14/10.1063/1.3240888
2009-10-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3240888
10.1063/1.3240888
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