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Variation of ISB absorption wavelength with the Al mole fraction in the barrier of GaN/AlGaN (3 nm/3 nm) SLs. The experimental results correspond to GaN/AlGaN SLs grown on GaN-on-Si(111) templates. In the inset, effect of doping on the and energy levels, in a GaN/AlGaN (5 nm/3 nm) SL.
High-resolution transmission electron microscopy image of a Si-doped SL grown on GaN-on-Si(111).
Low-temperature PL spectra from SLs grown on GaN-on-sapphire or GaN-on-Si(111) templates. The oscillations superimposed to the PL peaks are due to Fabry–Perot interference.
(a) IR absorption spectra for TM-polarized light measured in GaN/AlGaN SLs with different barrier Al contents and QW width, grown either on sapphire or on Si(111) templates. (b) Relative spectral width as a function of the absorption peak wavelength for SL grown on different substrates. Dashed line forms eye-guide.
Compares the ISB simulation and experimental results for samples with different dimensions and barrier Al content.
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