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Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates
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10.1063/1.3242345
/content/aip/journal/apl/95/14/10.1063/1.3242345
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3242345

Figures

Image of FIG. 1.
FIG. 1.

Variation of ISB absorption wavelength with the Al mole fraction in the barrier of GaN/AlGaN (3 nm/3 nm) SLs. The experimental results correspond to GaN/AlGaN SLs grown on GaN-on-Si(111) templates. In the inset, effect of doping on the and energy levels, in a GaN/AlGaN (5 nm/3 nm) SL.

Image of FIG. 2.
FIG. 2.

High-resolution transmission electron microscopy image of a Si-doped SL grown on GaN-on-Si(111).

Image of FIG. 3.
FIG. 3.

Low-temperature PL spectra from SLs grown on GaN-on-sapphire or GaN-on-Si(111) templates. The oscillations superimposed to the PL peaks are due to Fabry–Perot interference.

Image of FIG. 4.
FIG. 4.

(a) IR absorption spectra for TM-polarized light measured in GaN/AlGaN SLs with different barrier Al contents and QW width, grown either on sapphire or on Si(111) templates. (b) Relative spectral width as a function of the absorption peak wavelength for SL grown on different substrates. Dashed line forms eye-guide.

Tables

Generic image for table
Table I.

Compares the ISB simulation and experimental results for samples with different dimensions and barrier Al content.

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/content/aip/journal/apl/95/14/10.1063/1.3242345
2009-10-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3242345
10.1063/1.3242345
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