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Capacitance-voltage and current-voltage characteristics of the QD sample at 100 K. Inset: Real time measurement of collector current on applying write/erase pulse through the gate. Source-drain bias for the measurement is fixed at 100 mV.
Clockwise hysteresis loop observed in the conductance trace for =0.2, 0.3, 0.4, and 0.5 V at 100 K. The source drain bias is fixed at 100 mV.
characteristics of the sample at three different frequencies. The measurement temperature is 10 K.
Temperature dependent hysteresis characteristics observed in the capacitance measurement.
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