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Memory characteristics of InAs quantum dots embedded in GaAs quantum well
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10.1063/1.3242347
/content/aip/journal/apl/95/14/10.1063/1.3242347
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3242347
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Capacitance-voltage and current-voltage characteristics of the QD sample at 100 K. Inset: Real time measurement of collector current on applying write/erase pulse through the gate. Source-drain bias for the measurement is fixed at 100 mV.

Image of FIG. 2.
FIG. 2.

Clockwise hysteresis loop observed in the conductance trace for =0.2, 0.3, 0.4, and 0.5 V at 100 K. The source drain bias is fixed at 100 mV.

Image of FIG. 3.
FIG. 3.

characteristics of the sample at three different frequencies. The measurement temperature is 10 K.

Image of FIG. 4.
FIG. 4.

Temperature dependent hysteresis characteristics observed in the capacitance measurement.

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/content/aip/journal/apl/95/14/10.1063/1.3242347
2009-10-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Memory characteristics of InAs quantum dots embedded in GaAs quantum well
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3242347
10.1063/1.3242347
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