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Sharp fall of electrical resistance for a small application of magnetic field on a metastable form of a compound, , under pressure
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10.1063/1.3243462
/content/aip/journal/apl/95/14/10.1063/1.3243462
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3243462
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistance, defined as , as a function of magnetic field for under pressure (10 and 15 kbar) at 1.8 and 5 K. The arrows and numbers placed near the curves (shown typically for some graphs only) serve as guides to the eyes. The low-field region is shown in an expanded form for to highlight the sharp fall while switching the magnetic field direction.

Image of FIG. 2.
FIG. 2.

Isothermal magnetization behavior at 1.8 and 5 K for under ambient pressure and 10 kbar. The arrows and the numbers placed serve as guides for the eyes.

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/content/aip/journal/apl/95/14/10.1063/1.3243462
2009-10-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sharp fall of electrical resistance for a small application of magnetic field on a metastable form of a compound, Tb5Si3, under pressure
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/14/10.1063/1.3243462
10.1063/1.3243462
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