Full text loading...
A schematic of an expitaxial film grown on a (111) Si substrate with an (111) buffer layer.
Temperature-dependent PL spectra of NBE emissions of thin film grown on (111) Si substrate.
Temperature-dependent PL spectra of pure ZnO film grown on (111) Si substrate.
Temperature dependence of the electron concentration for film. The inset shows a plot of from 170 to 330 K. The slope gives a thermal activation energy of .
Electrical properties of and ZnO thin films.
Article metrics loading...