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Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium
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10.1063/1.3236771
/content/aip/journal/apl/95/15/10.1063/1.3236771
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3236771

Figures

Image of FIG. 1.
FIG. 1.

A schematic of an expitaxial film grown on a (111) Si substrate with an (111) buffer layer.

Image of FIG. 2.
FIG. 2.

Temperature-dependent PL spectra of NBE emissions of thin film grown on (111) Si substrate.

Image of FIG. 3.
FIG. 3.

Temperature-dependent PL spectra of pure ZnO film grown on (111) Si substrate.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the electron concentration for film. The inset shows a plot of from 170 to 330 K. The slope gives a thermal activation energy of .

Tables

Generic image for table
Table I.

Electrical properties of and ZnO thin films.

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/content/aip/journal/apl/95/15/10.1063/1.3236771
2009-10-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3236771
10.1063/1.3236771
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