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Dependance of the FWHM of the XRD- scan and the transistor’s channel mobilities on the oxygen partial pressure during PLD-growth on quartz glass substrate. The gray box marks the preferred pressure.
XRD scan of the ZnO-(0002) peak for different glass substrates and sapphire. Inset: AFM picture of the surface of a 30 nm thick ZnO channel layer on quartz glass and sapphire substrate.
(a) Output characteristics of a ZnO MESFET grown on quartz glass. (b) Transfer characteristics of ZnO MESFETs grown on quartz and borosilicate glasses for . Inset: photograph of the MESFET structure (S-Source, D-Drain, and G-Gate).
Admittance spectra of Schottky diodes on the glass substrates and sapphire. The dashed gray line indicates the decay of a first-order low-pass filter. Inset: conductance of a Schottky diode on quartz for different voltages.
Overview of measured structural and electrical properties.
Comparison of device parameters for various FETs on glass substrates. Channel materials: ZTO: zinc tin oxide, GIZO: gallium indium zinc oxide. : threshold/on voltage, : source-drain-voltage in saturation regime.
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