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ZnO-based metal-semiconductor field-effect transistors on glass substrates
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Image of FIG. 1.
FIG. 1.

Dependance of the FWHM of the XRD- scan and the transistor’s channel mobilities on the oxygen partial pressure during PLD-growth on quartz glass substrate. The gray box marks the preferred pressure.

Image of FIG. 2.
FIG. 2.

XRD scan of the ZnO-(0002) peak for different glass substrates and sapphire. Inset: AFM picture of the surface of a 30 nm thick ZnO channel layer on quartz glass and sapphire substrate.

Image of FIG. 3.
FIG. 3.

(a) Output characteristics of a ZnO MESFET grown on quartz glass. (b) Transfer characteristics of ZnO MESFETs grown on quartz and borosilicate glasses for . Inset: photograph of the MESFET structure (S-Source, D-Drain, and G-Gate).

Image of FIG. 4.
FIG. 4.

Admittance spectra of Schottky diodes on the glass substrates and sapphire. The dashed gray line indicates the decay of a first-order low-pass filter. Inset: conductance of a Schottky diode on quartz for different voltages.


Generic image for table
Table I.

Overview of measured structural and electrical properties.

Generic image for table
Table II.

Comparison of device parameters for various FETs on glass substrates. Channel materials: ZTO: zinc tin oxide, GIZO: gallium indium zinc oxide. : threshold/on voltage, : source-drain-voltage in saturation regime.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO-based metal-semiconductor field-effect transistors on glass substrates