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40 Gb/s surface-illuminated Ge-on-Si photodetectors
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10.1063/1.3243694
/content/aip/journal/apl/95/15/10.1063/1.3243694
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3243694
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic and (b) optical microscope views of the surface illuminated pin photodetector. The mesa diameter is . The thicknesses are 160, 40, 300, and 150 nm for , , and layers, respectively.

Image of FIG. 2.
FIG. 2.

Dark current as a function of the applied bias of photodetectors of different diameter: 10, 15, 20, and .

Image of FIG. 3.
FIG. 3.

External optical responsivity as a function of the reverse applied bias of photodetectors of different diameters: 10, 15, 20, and .

Image of FIG. 4.
FIG. 4.

External optical responsivity as a function of wavelength for diameter photodetector at 0 V bias.

Image of FIG. 5.
FIG. 5.

Normalized optical response as a function of frequency for surface illuminated photodetector of different diode diameters under −5 V bias.

Image of FIG. 6.
FIG. 6.

Eye diagram at 40 Gb/s for a diameter photodetector under 5 V reverse bias.

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/content/aip/journal/apl/95/15/10.1063/1.3243694
2009-10-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 40 Gb/s surface-illuminated Ge-on-Si photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3243694
10.1063/1.3243694
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