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Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers
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10.1063/1.3244202
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Affiliations:
1 Institute for Physics of Microstructures Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105, Russia
a) Author to whom correspondence should be addressed. Tel.: +7 831 4385037. FAX: +7 831 4 609111. Electronic mail: inquisitor@ipm.sci-nnov.ru.
Appl. Phys. Lett. 95, 151902 (2009)
/content/aip/journal/apl/95/15/10.1063/1.3244202
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## Figures

FIG. 1.

AFM images of the samples with amount of deposited Ge: equal to ML obtained by RHEED (a) and with 0.3 ML less (4.0 ML) (b). The size of images is .

FIG. 2.

Experimental and theoretical dependences of on the thickness of the predeposited SiGe layers , obtained for (◼ denotes experiment and solid line denotes model) and (▲ denotes experiment and dashed line denotes model). The schematic view of the structures is shown in the inset.

FIG. 3.

Experimental and theoretical dependences of on the thickness of the unstrained Si spacer layer . The Ge content and thickness of the SiGe layer are and (◼ denotes experiment and solid line denotes model); and (▲ denotes experiment and dashed line denotes model); and (◇ denotes experiment and dotted line denotes model). The schematic view of the structures is shown in the inset.

FIG. 4.

Experimental (◼) and theoretical (solid line) dependences of on the Ge content in the strained SiGe layer and dependence of the calculated amount of Ge segregated on the surface on (dashed line). The thickness of the SiGe layer is . The schematic view of the structures is shown in the inset.

/content/aip/journal/apl/95/15/10.1063/1.3244202
2009-10-12
2014-04-24

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