1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers
Rent:
Rent this article for
USD
10.1063/1.3244202
/content/aip/journal/apl/95/15/10.1063/1.3244202
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3244202
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of the samples with amount of deposited Ge: equal to ML obtained by RHEED (a) and with 0.3 ML less (4.0 ML) (b). The size of images is .

Image of FIG. 2.
FIG. 2.

Experimental and theoretical dependences of on the thickness of the predeposited SiGe layers , obtained for (◼ denotes experiment and solid line denotes model) and (▲ denotes experiment and dashed line denotes model). The schematic view of the structures is shown in the inset.

Image of FIG. 3.
FIG. 3.

Experimental and theoretical dependences of on the thickness of the unstrained Si spacer layer . The Ge content and thickness of the SiGe layer are and (◼ denotes experiment and solid line denotes model); and (▲ denotes experiment and dashed line denotes model); and (◇ denotes experiment and dotted line denotes model). The schematic view of the structures is shown in the inset.

Image of FIG. 4.
FIG. 4.

Experimental (◼) and theoretical (solid line) dependences of on the Ge content in the strained SiGe layer and dependence of the calculated amount of Ge segregated on the surface on (dashed line). The thickness of the SiGe layer is . The schematic view of the structures is shown in the inset.

Loading

Article metrics loading...

/content/aip/journal/apl/95/15/10.1063/1.3244202
2009-10-12
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3244202
10.1063/1.3244202
SEARCH_EXPAND_ITEM