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Evolution of stress-thickness during growth of sputtered Be films at RT with no sample bias (black curve), RT with sample bias of 80 V (red curve), and with sample bias of 80 V (blue curve). The inset shows the incremental stress for the same films.
Snapshots of a Be film deposited at for different values of the and different thicknesses. (a) after deposition of 90 ML, (b)–(d) after deposition of 10, 65, and 110 ML, respectively (ML stands for monolayers).
Porosity as a function of film thickness after deposition of 110 ML at and an [Fig. 2(c)]. The inset shows the evolution of porosity during growth.
SEM images of Be films grown at a temperature of , pressure of 5 mTorr, and sample bias of 100 V for thicknesses of (a) 1900 and (b) 9000 nm.
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