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X-ray photoelectron spectra showing the marked difference in oxide signal due to the different photoelectron escape depths of the (a) and (b) core-level electrons. Note that these spectra are from the exact same sample.
X-ray photoelectron spectra showing the detection of Ga-oxides in the (a) core-level electron spectrum while the Ga-oxide signal is at or below the level of detection in the (b) region for the exact same treated GaAs surface with 1 nm ALD deposited . For comparison, (c) the region of a native oxide/GaAs surface with detectable Ga-oxide is shown.
Theoretical oxide peak to bulk peak ratio for and spectra vs thickness. The regions are much more sensitive to changes in oxide thickness.
Asymmetric lineshape of the photoelectron spectrum. This asymmetry is due to core-hole screening rather than the presence of In-oxides. The absence of oxygen is shown in the spectrum in the inset.
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