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Effective carrier lifetime and the corresponding of -Si (FZ (100), -type, , thick), with symmetrically passivated front and back surfaces using industrial inline PECVD layers as a function of the excess carrier density ( thickness: 50 nm).
Optical constants n and k of PECVD as a function of the wavelength, obtained fitting a Cauchy model with ellipsometry measurement.
High-frequency and quasistatic capacitance-voltage measurements of a 30 nm thin PECVD layer deposited on a -doped substrate . A negative charge density of was calculated from this curve.
Summary of aluminum oxide deposition techniques used for passivation of -Si -type surfaces. A table presenting and for the different aluminum oxide deposition techniques that has been reported in literature is included in Ref. 29.
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