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Very low surface recombination velocity on -type -Si by high-rate plasma-deposited aluminum oxide
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10.1063/1.3250157
/content/aip/journal/apl/95/15/10.1063/1.3250157
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3250157

Figures

Image of FIG. 1.
FIG. 1.

Effective carrier lifetime and the corresponding of -Si (FZ (100), -type, , thick), with symmetrically passivated front and back surfaces using industrial inline PECVD layers as a function of the excess carrier density ( thickness: 50 nm).

Image of FIG. 2.
FIG. 2.

Optical constants n and k of PECVD as a function of the wavelength, obtained fitting a Cauchy model with ellipsometry measurement.

Image of FIG. 3.
FIG. 3.

High-frequency and quasistatic capacitance-voltage measurements of a 30 nm thin PECVD layer deposited on a -doped substrate . A negative charge density of was calculated from this curve.

Tables

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Table I.

Summary of aluminum oxide deposition techniques used for passivation of -Si -type surfaces. A table presenting and for the different aluminum oxide deposition techniques that has been reported in literature is included in Ref. 29.

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/content/aip/journal/apl/95/15/10.1063/1.3250157
2009-10-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/15/10.1063/1.3250157
10.1063/1.3250157
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