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Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
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Figures

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FIG. 1.

The electrical characteristics of pentacene-based OTFTs, (a) without and (b) with 3.5-nm-thick inserted between the S/D electrode and pentacene active layer. The inset of Fig. 1(a) shows the schematic diagram of a transparent pentacene-based TFT with thin layer introduced between the drain/source and pentacene.

Image of FIG. 2.

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FIG. 2.

Contact resistance of devices without and with 3.5-nm-thick inserted as a function of gate voltage.

Image of FIG. 3.

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FIG. 3.

Both drain current ( at ) and on resistance ( at ) as a function of layer thickness for the 65-nm-thick pentacene-based OTFTs.

Image of FIG. 4.

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FIG. 4.

The energy diagram at and pentacene interface as (a) 0-nm-thick, (b) 3.5-nm-thick and (c) 5.0-nm-thick layer were inserted.

Image of FIG. 5.

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FIG. 5.

Mobility and threshold voltage of the 65-nm-thick pentacene-based OTFTs with different thicknesses of layer.

Image of FIG. 6.

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FIG. 6.

The transmittance spectra of the OTFTs with 0-, 2.5-, and 3.5-nm-thick layers.

Tables

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Table I.

Work function versus thickness of buffer layer deposited on ITO substrate.

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/content/aip/journal/apl/95/16/10.1063/1.3240893
2009-10-20
2014-04-23

Abstract

With the use of fullerenetin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work functionmeasured at the and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.

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Scitation: Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3240893
10.1063/1.3240893
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