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Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
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/content/aip/journal/apl/95/16/10.1063/1.3240893
2009-10-20
2014-12-23

Abstract

With the use of fullerenetin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work functionmeasured at the and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.

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Scitation: Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3240893
10.1063/1.3240893
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