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Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact
5.R. Hajlaoui, G. Horowitz, F. Garnier, A. A. Arce-Brouchet, L. Laigre, A. E. Kassmi, F. Demanze, and F. Kouki, Adv. Mater. (Weinheim, Ger.) 9, 389 (1997).
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With the use of fullerenetin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work functionmeasured at the and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.
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