1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High-gain photoconductivity in semiconducting InN nanowires
Rent:
Rent this article for
USD
10.1063/1.3242023
/content/aip/journal/apl/95/16/10.1063/1.3242023
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3242023
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The FESEM image of the ensemble of the as-grown InN NWs. (b) The TEM image and its corresponding SAED pattern (the inset) of a single InN NW. (c) A typical PL spectrum measured at of the ensemble of the as-grown InN NWs. (d) The selected curves of a single InN NW device with diameter of measured at different temperature in vacuum. Inset in (d) shows the typical FESEM image of a single InN NW device with two Pt contacts fabricated by FIB deposition.

Image of FIG. 2.
FIG. 2.

(a) The temperature-dependent dark and photocurrents of the single InN NW in the range of . (b) The selected photocurrent response to the excitation of the single InN NW at different temperatures in vacuum. Inset in (b) shows the temperature-dependent photosensitivity of the single InN NW in the range of .

Image of FIG. 3.
FIG. 3.

The temperature-dependent carrier lifetime and its corresponding photocurrent gain of the single InN NW in the range of in vacuum.

Loading

Article metrics loading...

/content/aip/journal/apl/95/16/10.1063/1.3242023
2009-10-23
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-gain photoconductivity in semiconducting InN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3242023
10.1063/1.3242023
SEARCH_EXPAND_ITEM