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Mechanism of carrier injection in Ohmic contacts
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10.1063/1.3242420
/content/aip/journal/apl/95/16/10.1063/1.3242420
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3242420

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the hole concentration for the GaN (a) and AlGaN (b) samples with various doping levels.

Image of FIG. 2.
FIG. 2.

Specific contact resistance as a function of temperature obtained for GaN (a) and AlGaN (b) samples with different Mg doping.

Image of FIG. 3.
FIG. 3.

Schematic valence band alignment near the metal-semiconductor interface.

Tables

Generic image for table
Table I.

Parameters obtained for all samples with different doping levels.

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/content/aip/journal/apl/95/16/10.1063/1.3242420
2009-10-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg(0≤x<0.1) Ohmic contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3242420
10.1063/1.3242420
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