1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical resistance switching in Ti added amorphous
Rent:
Rent this article for
USD
10.1063/1.3243983
/content/aip/journal/apl/95/16/10.1063/1.3243983
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3243983
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of (a) and (b) stacks swept at the first ten cycles at room temperature. The inserted Al layer was controlled at 2 nm thickness.

Image of FIG. 2.
FIG. 2.

characteristics of an stack swept at the first cycle. The inset figure depicts the Al spectra at the interface by the depth profile of XPS analysis.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional TEM image of an as-deposited stack, which shows the existence of an amorphous and discontinuous layer and (b) Compositional depth profile of a stack after cycling for 100 times as analyzed by AES.

Image of FIG. 4.
FIG. 4.

characteristics of a stack swept at the first 10 cycles at RT. The inset figure depicts the switching between HRS and LRS vs operation cycles.

Loading

Article metrics loading...

/content/aip/journal/apl/95/16/10.1063/1.3243983
2009-10-20
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical resistance switching in Ti added amorphous SiOx
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3243983
10.1063/1.3243983
SEARCH_EXPAND_ITEM