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Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications
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10.1063/1.3245312
/content/aip/journal/apl/95/16/10.1063/1.3245312
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3245312
/content/aip/journal/apl/95/16/10.1063/1.3245312
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/content/aip/journal/apl/95/16/10.1063/1.3245312
2009-10-20
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3245312
10.1063/1.3245312
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