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(a) Time evolution of the imaginary part, , of the pseudodielectric functions of - and -type c-Si substrates recorded at the interband critical point during the plasma exposure at . (b) SE spectra of the imaginary part, , of the pseudodielectric functions of - and -type recorded at some representative points A–D [in (a)] and at the end of the remote plasma exposure. The dielectric function of c-Si from Aspnes is also shown for comparison. AFM topographies for the c-Si surface after the wet etching and after the hydrogen exposure are also shown with the corresponding rms surface roughness values.
Dependence of the thickness of the hydrogenated surface layer on the substrate temperature. The BEMA model used for fitting SE spectra is also reported as inset.
Comparison between experimental data of the thickness of the hydrogenated surface layer (dots) and fit (lines) by Eq. (11), for - and -type silicon. Inset shows a scheme of the hydrogenated surface layer thickness, , as a result of the competition between hydrogen insertion rate, and etching rate, .
Arrhenius plot of the etching rate constant, , for -type silicon. The negative pseudoactivation energy, , of the etching process is also reported.
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