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Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications
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10.1063/1.3245312
/content/aip/journal/apl/95/16/10.1063/1.3245312
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3245312
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Figures

Image of FIG. 1.
FIG. 1.

(a) Time evolution of the imaginary part, , of the pseudodielectric functions of - and -type c-Si substrates recorded at the interband critical point during the plasma exposure at . (b) SE spectra of the imaginary part, , of the pseudodielectric functions of - and -type recorded at some representative points A–D [in (a)] and at the end of the remote plasma exposure. The dielectric function of c-Si from Aspnes is also shown for comparison. AFM topographies for the c-Si surface after the wet etching and after the hydrogen exposure are also shown with the corresponding rms surface roughness values.

Image of FIG. 2.
FIG. 2.

Dependence of the thickness of the hydrogenated surface layer on the substrate temperature. The BEMA model used for fitting SE spectra is also reported as inset.

Image of FIG. 3.
FIG. 3.

Comparison between experimental data of the thickness of the hydrogenated surface layer (dots) and fit (lines) by Eq. (11), for - and -type silicon. Inset shows a scheme of the hydrogenated surface layer thickness, , as a result of the competition between hydrogen insertion rate, and etching rate, .

Image of FIG. 4.
FIG. 4.

Arrhenius plot of the etching rate constant, , for -type silicon. The negative pseudoactivation energy, , of the etching process is also reported.

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/content/aip/journal/apl/95/16/10.1063/1.3245312
2009-10-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3245312
10.1063/1.3245312
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