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-type /intrinsic--type Si heterojunction photodiodes for near-infrared light detection at room temperature
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10.1063/1.3250171
/content/aip/journal/apl/95/16/10.1063/1.3250171
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3250171
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Photoelectron spectrum of a film, wherein the threshold value of the photon energy corresponds to the ionization potential and (b) the energy band diagram of an -type -type Si heterojunction.

Image of FIG. 2.
FIG. 2.

characteristics of a heterojunction measured at a signal frequency of 1 MHz. The inset shows the plot of against bias voltage.

Image of FIG. 3.
FIG. 3.

characteristics of a heterojunction measured in the dark and under the illumination of a 6-mW laser at 300 K.

Image of FIG. 4.
FIG. 4.

External quantum efficiency vs reverse voltage measured under illumination at a wavelength of . The inset shows the photoresponse spectrum measured at zero bias and 300 K in the NIR region.

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/content/aip/journal/apl/95/16/10.1063/1.3250171
2009-10-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3250171
10.1063/1.3250171
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