1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reliability properties of metal-oxide-semiconductor capacitors using high- dielectric
Rent:
Rent this article for
USD
10.1063/1.3250242
/content/aip/journal/apl/95/16/10.1063/1.3250242
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3250242
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The Weibull distribution of MOS capacitors with two different areas are plotted as a function of time-to-breakdown under the applied gate voltage −7.5 V. The thickness is 13.5 nm and the capacitor areas are and . The inset graph shows the measurement of the MOS capacitors with area . (b) The Weibull distribution of MOS capacitors with three different thicknesses are plotted as a function of time-to-breakdown under the applied gate voltage −7.5 V. The thicknesses are 13.5, 9.6, and 8.7 nm and the capacitor area is .

Image of FIG. 2.
FIG. 2.

(a) The schematic picture of defect generation and breakdown conduction path in the percolation model. (b) The schematic picture of defect generation in the modified percolation model.

Image of FIG. 3.
FIG. 3.

The physical thickness of the LAO film was plotted as a function of using Eq. (9).

Loading

Article metrics loading...

/content/aip/journal/apl/95/16/10.1063/1.3250242
2009-10-19
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3250242
10.1063/1.3250242
SEARCH_EXPAND_ITEM