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Schematic side-cut of the VIP.
(a) Scanning electron microscope image of a focus ion beam cut of the Au–Au bonding interface and (b) optical view of a LT-GaAs layer reported on a 2-in.-diameter silicon substrate.
Scanning electron microscope image of the VIP.
Experimental (circles) and theoretical (solid line) terahertz power emitted by the VIP as function of the frequency. We calculated the terahertz power using the equivalent circuit shown in the inset neglecting losses. Experimental data are obtained with a 12 V bias voltage and 200 mW of optical power at 780 nm. With our -diameter optical spot size, we calculated that the effective input optical power on the photodetector is around 50 mW.
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