1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
Rent:
Rent this article for
USD
10.1063/1.3251784
/content/aip/journal/apl/95/16/10.1063/1.3251784
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3251784
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current density-voltage characteristics of a typical memory device. Cross-sectional BFTEM image of sandwiched structure deposited on a (3000 Å)/Si substrate is shown in the right bottom inset.

Image of FIG. 2.
FIG. 2.

A series of the cross-sectional HRTEM images of structures observed step by step: (a) Image showing the existence of native aluminum oxide at the aluminum metal surface. (b) Image indicating the broadening of native aluminum oxide by the thermal annealing. (c) Image obtained after depositing amorphous titanium oxide thin film by a 400 cycle PEALD process. (d) Completed cell image after thermal evaporation deposition of the aluminum top electrode.

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) and (b) measured as a function of Al thickness on amorphous titanium oxide film deposited by the PEALD process.

Image of FIG. 4.
FIG. 4.

Energy filtered-TEM elemental (oxygen) maps of two different samples (the off and on state): (a) EELS based oxygen elemental map of as-grown structure, corresponding to the off state. (b) Oxygen elemental map of the sample applied negative set bias (−3 V) on the top Al electrode, corresponding to the on state. The left insets are the corresponding average intensity profiles obtained from the white rectangular areas. (c) Schematics of the proposed model for bipolar resistive switching of device.

Loading

Article metrics loading...

/content/aip/journal/apl/95/16/10.1063/1.3251784
2009-10-21
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3251784
10.1063/1.3251784
SEARCH_EXPAND_ITEM